writer：Yi Chen, Xiao-Lei Gong, Jing-Gang Gai*
keywords：Progress and Challenges in Transfer of Large-Area Graphene Film
source：期刊
specific source：Advanced Science, 2016, 3(8): 1500343
Issue time：2016年

Graphene, the thinnest, strongest, and stiffest material with

exceptional thermal conductivity and electron mobility, has increasingly

received worldwide attention in the past few years. These unique properties may

lead to novel or improved technologies to address the pressing global

challenges in many applications including transparent conducting electrodes, fi

eld effect transistors, fl exible touch screen, single-molecule gas detection,

desalination, DNA sequencing, osmotic energy production, etc. To realize these applications,

it is necessary to transfer graphene fi lms from growth substrate to target

substrate with large-area, clean, and low defect surface, which are crucial to

the performances of large-area graphene devices. This critical review assesses

the recent development in transferring large-area graphene grown on Fe, Ru, Co,

Ir, Ni, Pt, Au, Cu, and some nonmetal substrates by using various synthesized

methods. Among them, the transfers of the most attention kinds of graphene

synthesized on Cu and SiC substrates are discussed emphatically. The advances

and the main challenges of each wet and dry transfer method for obtaining the

transferred graphene film with large-area, clean, and low defect surface are

also reviewed. Finally, the article concludes the most promising methods and

the further prospects of graphene transfer.