当前位置:群英聚首 > 论文著作 > 正文
Ultraviolet exposure enhanced silicon direct bonding
来源:马沧海教授个人网站 发布日期:2017-08-27
作者:G Liao, X Zhang, X Lin, C Ma, L Nie, T Shi
关键字:晶圆键合
论文来源:期刊
具体来源:Frontiers of Mechanical Engineering in China
发表时间:2010年
Ultraviolet (UV) exposure, as an additional technique following the traditional wet chemical activation processes, is applied to enhance hydrophilic silicon direct bonding. The effects of UV exposure on silicon wafers’ nano-topography and bonding strength are studied. It is found that the surface roughness of silicon wafers initially decreases and then increases with UV exposure time, and the bonding strength increases and then decreases accordingly. The correlations of annealing temperature and annealing time vs. bonding strength are experimentally explored. Results indicate that the bonding strength increases sharply then gently with increasing annealing temperature and annealing time using UV exposure. Besides, the reliability of silicon direct bonding with UV exposure enhancement after the high/low temperature cycle test, constant temperature and humidity test, vibration test and shock test is investigated. It follows from the results that the bonding strength of silicon wafer pairs with UV exposure decreases after the environmental tests, whereas the residual strength is still higher than that without UV exposure, and the variation trends of bonding strength vs. UV exposure time, annealing temperature and annealing time remain unchanged. Therefore, following the traditional wet chemical activation processes, appropriate UV exposure (about three minutes in this study) is effective and promising to enhance silicon direct bonding.
Copyright © 2005 Polymer.cn All rights reserved
中国聚合物网 版权所有
经营性网站备案信息

京公网安备11010502032929号

工商备案公示信息

京ICP证050801号

京ICP备12003651号