writer：Maolin Mu, Lunyao Pan, Xiankan Zeng, Yaolin Zhang, Yuqiang Huang, Chenglong Li, Di Shen, Xinning Wang, Weiqing Yang, Fangyan Liu, Wen Li
keywords：Sulfonic acid ligands，Cu2ZnSnS4，Carrier transport，Perovskite quantum dots light-emitting diodes
source：期刊
Issue time：2026年

Lead halide perovskite quantum dots (PeQDs) have become highly competitive electroluminescent materials for light-emitting diodes, primarily owing to their tunable emission wavelength, narrow emission full-width at half-maximum, high defect tolerance, and cost-effective solution processability. However, the inherently insulating long-chain organic ligands on PeQDs surface tend to induce abundant defects and imbalanced charge transport in PeQDs light-emitting diodes (PeQLEDs). To address this issue, we develop a ligand-mediated strategy for the surface reconstruction of FAPbBr3 QDs using benzene sulfonic acid and p-toluenesulfonic acid (DBSA). Specif ically, the more strongly polarized DBSA molecules exhibit a pronounced delocalized electron cloud distribution, which promoted more efficient carrier transport and significantly improved the carrier mobility of PeQDs film. Consequently, the DBSA optimized PeQLEDs exhibits stable electroluminescence emission at 529 nm with a maximum external quantum efficiency of up to 17.44% as well as a low turn-on voltage of 2.2 V and a maximum luminance of 45069 cd m-2. These values are all substantially superior to those of the control device. This work provides new insights into the exploration of appropriate surface ligands for regulating the surface electrical properties of PeQDs and modulating carrier transport in optoelectronic devices, thereby advancing the devel opment of high-performance PeQLEDs