writer：Ming Ma, Qingzhong Xue (*), Huijuan Chen, Xiaoyan Zhou, Dan Xia, Cheng Lv, and Jie Xie
keywords：Pd doped amorphous carbon film
source：期刊
specific source：APPLIED PHYSICS LETTERS 97, 061902, 2010
Issue time：2010年

The Pd doped amorphous carbon (a-C:Pd) films were deposited on n-Si substrates with or without a native SiO2 layer using magnetron sputtering. The photovoltaic characteristics of the a-C:Pd/SiO2 / Si and a-C:Pd/Si junctions were studied. It is found that under light illumination of 15 mW/cm2 at room temperature, the a-C:Pd/SiO2 / Si solar cell fabricated at 350 °C has a high
power conversion efficiency of 4.7%, which is much better than the a-C/Si junctions reported before. The enhanced conversion efficiency is ascribed to the Pd doping and the increase in sp2-bonded carbon clusters in the carbon film caused by the high temperature deposition.