Stress at the coalesced boundary of GaN grown on maskless periodically grooved sapphire
作者：Yu, Naisen; Mao, Zhangwen; Hu, Danyang; et al.
关键字：GaN grown
论文来源：期刊
具体来源：Optoelectronics and Advanced Materials-Rapid Communications Volume: 6 Issue: 11-12 Pages: 1034-1036
发表时间：2012年
Source: Optoelectronics and Advanced Materials-Rapid Communications Volume: 6 Issue: 11-12 Pages: 1034-1036 Published: 2012