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Journal Paper List (2014-2020)
作者:单福凯
关键字:晶体管
论文来源:期刊
发表时间:2020年

近年(2014年以后)发表通信作者学术论文如下:

(更新日期: May 28, 2020)


2020

62. Xiaocong Tang, Zhao Yao*, Yang Li, Weihua Zong, Guoxia Liu, Fukai Shan*(通信), A high performance UWB MIMO antenna with defected ground structure and U‐shape branches, International Journal of RF and Microwave Computer-Aided Engineering, *** (2020)*** 10.1002/mmce.22270

61. Daiming Liu, Chengchao Jin, Fukai Shan*(通讯), Junjing He, and Fei Wang*, Synthesizing BaTiO3 nanostructures to explore morphological influence, kinetics, and mechanism of piezocatalytic dye degradation, ACS Applied Materials & Interfaces,  12 (2020) 17443 , DOI: 10.1021/acsami.9b23351

60. Zhenyu Yang, Bei Jiang*, Zhijie Zhang, Zhongzheng Wang, Xiaobo He, Da Wan*, Xuming Zou, Xingqiang Liu, Lei Liao, and Fukai Shan* (通讯), The photovoltaic and photoconductive photodetector based on GeSe/2D semiconductor van der Waals heterostructure, Applied Physics Letters, 116 (2020) 141101, DOI: 10.1063/1.5143961

59. Yanan Ding, Youchao Cui, Xuhai Liu, Guoxia Liu, and Fukai Shan* (通讯), Welded silver nanowire networks as high-performance transparent conductive electrodes: welding techniques and device applications, Applied Materials Today, 20 (2020) 100634 , DOI: 10.1016/j.apmt.2020.100634.

58. Zhijie Xin, Yanan Ding, Yixin Zhu, Chuanyu Fu, Zhao Yao, Qian Chen, Guoxia Liu*, and Fukai Shan* (通讯), Solution-processed high-performance p-type perovskite NdAlO3 thin films for transparent electronics, Adanced Electronic Materials, 6 (2020) 1901110, DOI: 10.1002/aelm.201901110

57. Yanan Ding, Chao Wang, Zhijie Xin, Youchao Cui, Zhen Wang, Guoxia Liu, and Fukai Shan (通讯), Low-temperature fabrication of nontoxic indium oxide nanofibers and their application in field-effect transistors, IEEE Electron Device Letters, 41 (2020) 413, DOI: 10.1109/LED.2020.2964318

56. Yixin Zhu, Guoxia Liu, Zhijie Xin, Chuanyu Fu, Qing Wan, and Fukai Shan (通讯), Solution-processed, electrolyte gated In2O3 flexible synaptic transistors for brain-inspired neuromorphic applications, ACS Applied Materials & Interfaces, 12 (2020) 1061, DOI: 10.1021/acsami.9b18605

55. Yuanyue Li, Youchao Cui, Zhao Yao, Guoxia Liu, and Fukai Shan (通讯), Fast electrochromic switching of electrospun Cu-doped NiO nanofibers, Scripta Materialia, 178 (2020) 472-476, DOI: 10.1016/j.scriptamat.2019.12.035

54. Zhen Wang, Zhijie Xin, Youchao Cui, Chao Wang, Chunfeng Wang, Byoungchul Shin, Guoxia Liu, and Fukai Shan (通讯), The role of oxygen in determining the electrical performance of ZnSnO nanofiber field-effect transistors, Journal of Physics D: Applied Physics, 53 (2020) 015109. DOI: 10.1088/1361-6463/ab47b2

53. Chuanyu Fu, Yanan Ding, Youchao Cui, You Meng, Zhao Yao, Guoxia Liu, and Fukai Shan (通讯), Self-welding and low-temperature formation of metal oxide nanofiber networks and its application to electronic devices, IEEE Electron Device Letters, 41 (2020) 62-65, DOI: 10.1109/LED.2019.2953314


2019

52. Yanan Ding, Caixuan Fan, Chuanyu Fu, You Meng, Guoxia Liu, and Fukai Shan* (Correspondence), High-performance indium oxide thin-film transistors with aluminum oxide passivation, IEEE Electron Device Letters, 40 (2019) 1949-1952. DOI: 10.1109/LED.2019.2947762

51.Yixin Zhu, Byoungchul Shin, Guoxia Liu, and Fukai Shan (Correspondence), Electrospun ZnSnO nanofibers for neuromorphic transistors with ultralow energy consumption, IEEE Electron Device Letters, 40 (2019) 1776-1779. DOI: 10.1109/LED.2019.2942342

50. Daiming Liu, Yawei Song, Zhijie Xin, Guoxia Liu, Chengchao Jin*, and Fukai Shan* (Correspondence), High-piezocatalytic performance of eco-friendly (Bi1/2Na1/2)TiO3-based nanofibers by electrospinning, Nano Energy, 65 (2019) 104024. DOI:10.1016/j.nanoen.2019.104024. (中科院一区,影响因子 15.548)

49. Yuanyue Li, Xiaocui Wang, Guoxia Liu, Byoungchul Shin, Fukai Shan* (Correspondence), High thermoelectric efficiency of p-type BiSbTe-based composites with CuGaTe2 nanoinclusions, Scripta materialia, 172 (2019) 88-92. DOI:10.1016/j.scriptamat.2019.07.016. (中科院二区,影响因子 4.539)

48. Zhuodong Li, You Meng, Chao Wang, Youchao Cui, Zhao Yao, Byoungchul Shin,Guoxia Liu*, Fukai Shan* (Correspondence), Enhancement-mode field effect transistors based on Ti-doped In2O3 nanowires fabricated by electrospinning, Journal of Physics D: Applied Physics, 52 (2019) 225102. DOI:10.1088/1361-6463/ab0de2. (中科院二区,影响因子 2.829)

47. Chunfeng Wang, Haotian Zhu, You Meng, Shengbin Nie, Yuna Zhao, Byoung-chul Shin, Rodrigo Martins, Elvira Fortunato, Fukai Shan* (Correspondence), and Guoxia Liu*, Sol-gel processed p-type CuAlO2 semiconductor thin films and the integration in transistors, IEEE Transactions on Electron Devices, 66 (2019) 1458. DOI:10.1109/TED.2019.2893453. (中科院三区,影响因子 2.704)


2018

46. Youchao Cui, You Meng, Zhen Wang, Chunfeng Wang, Guoxia Liu*, Rodrigo Martins, Elvira Fortunato, and Fukai Shan* (Correspondence), High Performance Electronic Devices Based on Nanofibers via a Crosslinking Welding Process, Nanoscale, 10 (2018) 19427. DOI:10.1039/c8nr05420g. (中科院一区,影响因子 7.233)

45. Zhen Wang, You Meng, Youchao Cui, Caixuan Fan, Guoxia Liu*, Byoungchul Shin, Dejun Feng, and Fukai Shan* (Correspondence), Low-Voltage and High-Performance Field-Effect Transistors based on ZnxSn1-xO Nanofibers with a ZrOx Dielectric, Nanoscale, 10 (2018) 14712. DOI:10.1039/c8nr03887b. (中科院一区,影响因子 7.233)

44. Ao Liu, You Meng, Huihui Zhu, Yong-Young Noh, Guoxia Liu*, and Fukai Shan* (Correspondence), Electronspun P-Type Nickel Oxide Semiconducting Nanowires for Low-Voltage Field-Effect Transistors, ACS Applied Materials & Interfaces, 10 (2018) 25841. DOI: 10.1021/acsami.7b08794 (中科院一区,影响因子 8.097)

43. You Meng, Kaihua Lou, Rui Qi, Zidong Guo, Byoungchul Shin, Guoxia Liu*, and Fukai Shan* (Correspondence), Nature Inspired Capillary-driven Welding Process for Boosting Metal-Oxide Nanofiber Electronics, ACS Applied Materials & Interfaces, 10 (2018) 20703. DOI:10.1021/acsami.8b05104. (中科院一区,影响因子 8.097)

42. You Meng, Ao Liu, Zidong Guo, Guoxia Liu*, Byoungchul Shin, Yong-Young Noh, Elvira Fortunato, Rodrigo Martins and Fukai Shan* (Correspondence), Electronic Devices Based on Oixide Thin Films Fabricated by Fibers-to-Film Process, ACS Applied Materials & Interfaces, 10 (2018) 18057. DOI:10.1021/acsami.8b02297. (中科院一区,影响因子 8.097)

41. Chao Wang, You Meng, Zidong Guo, Byoung-Chul Shin, Guoxia Liu*, and Fukai Shan* (Correspondence), High-performance Field-Effect Transistors Based on Gadolinium Doped Indium Oxide Nanofibers and Their Application in Logic Gate, Applied Physics Letters, 112, (2018) 213501. DOI: https://doi.org/10.1063/1.5026953(中科院二区,影响因子 3.495)

40. Ao Liu, Huihui Zhu, Guoxia Liu*, Yong-Young Noh, Elvira Fortunato, Rodrigo Martins and Fukai Shan* (Correspondence), Draw Spinning of Wafer-Scale Oxide Fibers for Electronic Devices, Advanced Electronic Materials, 4 (2018) 1700644. http://doi.org/10.1002/aelm.201700644 (中科院一区,影响因子 5.466)

39. Shengbin Nie, Ao Liu, You Meng, Byoungchul Shin, Guoxia Liu*, and Fukai Shan* (Correspondence), Solution-processed ternary p-type CuCrO2 semiconductor thin films and their application in transistors, Journal of Materials Chemistry C, 6 (2018) 1393, http://doi.org/10.1039/C7TC04810F (中科院一区,影响因子 5.976)

38. Fengyun Wang, Longfei Song, Hongchao Zhang, You Meng, Linqu Luo, Yan Xi, Lei Liu, Ning Han, Zaixing Yang, Jie Tang, Fukai Shan* (Correspondence), Johnny C. Ho*, ZnO Nanofiber Thin-Film Transistors with Low-Operating Voltages, Advanced Electronic Materials, 4 (2018) 1700336 . http://doi.org/10.1002/aelm.201700336 (中科院一区,影响因子 5.466)

37. Xiaocui Wang, Yuanyue Li*, Guoxia Liu, and Fukai Shan* (Correspondence), Achieving high power factor of p-type BiSbTe thermoelectric materials via adjusting hot-pressing temperature, Intermetallics, 93 (2018) 338. https://doi.org/10.1016/j.intermet.2017.10.015.(中科院二区,影响因子 3.42)


2017

36. Huihui Zhu, Ao Liu, Guoxia Liu*, and Fukai Shan* (Correspondence), Electrospun p-type CuO nanofibers for low-voltage field-effect transistors, Applied Physics Letters, 111 (2017) 143501. http://doi.org/10.1063/1.4998787(中科院二区,影响因子 3.495)

35. Caixuan Fan, Ao Liu, You Meng, Zidong Guo, Guoxia Liu*, and Fukai Shan* (Correspondence)Solution-Processed SrOx-Gated Oxide Thin-Film Transistors and InvertersIEEE Transactions on Electron Devices, 64 (2017) 4137-4143. http://doi.org/10.1109/TED.2017.2742060(中科院二区,影响因子 2.62)

34. Zidong Guo, Ao Liu, You Meng, Caixuan Fan, Byoungchul Shin, Guoxia Liu*, and Fukai Shan* (Correspondence), Solution-processed ytterbium oxide dielectrics for low-voltage thin-film Transistors and inverters, Ceramics International, 43 (2017) 15194-15200. http://doi.org/10.1016/j.ceramint.2017.08.052(中科院二区,影响因子 3.057)

33. Ao Liu, Huihui Zhu, Zidong Guo, You Meng, Guoxia Liu*, Elvira Fortunato, Rodrigo Martins, and Fukai Shan *(Correspondence), Solution combustion synthesis: low-temperature processing for p-type Cu:NiO thin films for transparent electronics, Advanced Materials, 29 (2017) 171599. http://doi.org/10.1002/adma.201701599(中科院一区,影响因子 21.95)

32. You Meng, Guoxia Liu*, Ao Liu, Zidong Guo, Wenjia Sun and Fukai Shan*(Correspondence)Photochemical activation of electrospun In2O3 nanofibers for high-performance electronic devices, ACS Applied Materials & Interfaces, 9 (2017) 10805-10812.  http://dx.doi.org/10.1021/acsami.6b15916 (中科院一区,影响因子 8.097)

31. Ao Liu, Zidong Guo, Guoxia Liu*, Chundan Zhu, Huihui Zhu, Byoungchul Shin, Elvira Fortunato, Rodrigo Martins, Fukai Shan(Correspondence), Redox chloride elimination reaction: facile solution route for indium-freee, low-voltage, and high-performance transistors, Advanced Electronic Materials, 3 (2017) 1600513. http://dx.doi.org/10.1002/aelm.201600513 (中科院二区,影响因子 5.466)

30. Huihui Zhu, Ao Liu, Fukai Shan(Correspondence), Wenrong Yang, Colin Barrow and Jingquan Liu*, Direct transfer of grapheme and application in low-voltage hybrid transistors, RSC Advances, 7 (2017) 2172-2179. http://dx.doi.org/10.1039/C6RA26452B (影响因子2.936)

29. Ao Liu, Shengbin Nie, Guoxia Liu, Huihui Zhu, Chundan Zhu, Byoungchul Shin, Elvira Fortunato, Rodrigo martins and Fukai Shan* (Correspondence), In situ one-step synthesis of p-type copper oxide for low-temperature, solution-processed thin-film transistors, Journal of Materials Chemistry C, 5 (2017) 2524 http://dx.doi.org/10.1039/c7tc00574a (中科院一区,影响因子 5.976)

2016

28. Chundan Zhu, Ao Liu, Guoxia Liu*, Guixia Jiang, You Meng, Elvira Fortunato, Rodrigo Martins, Fukai Shan* (Correspondence), Low-temperature, nontoxic water-induced high-k zirconium oxide dielectrics for low-voltage, high-perfromance oxide thin-film transistors, Journal of Materials Chemistry C, 4 (2016) 10715-10721. http://dx.doi.org/10.1039/C6TC02607A(中科院一区,影响因子5.25)

27. Guixia Jiang, Ao Liu, Guoxia Liu*, Chundan Zhu, You Meng, Byoungchul Shin, Elvira fortunate, Rodrigo Martins, and Fukai Shan(Correspondence), Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors. Applied Physics Letters, 109 (2016) 183508. http://dx.doi.org/10.1063/1.4966897 (中科院二区,影响因子3.4)

26. Fukai Shan#* (Correspondence), Ao Liu#, Huihui Zhu, Weijin Kong, Jingquan Liu, Byoungchul Shin, Elvira Fortunato, Rodrigo Martins, and Guoxia Liu*, High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric, Journal of Materials Chemistry C, 4 (2016) 9438-9444. http://dx.doi.org/10.1039/C6TC02137A(中科院一区,影响因子5.25) 

25. Yuanyue Li, Guoxia Liu, Xiaoying Qin*, and Fukai Shan*(Correspondence), Inhibition of minority transport for elevating the thermoelectric figure of merit of CuO/BiSbTe nanocomposites at high temperatures, RSC Advances, 6 (2016) 112050-112056. http://dx.doi.org/10.1039/C6RA24107G (影响因子3.2)

24. Ao Liu, Guoxia Liu*, Chundan Zhu, Huihui Zhu, Elvira fortunate, Rodrigo Martins, and Fukai Shan* (Correspondence)Solution-processed alkaline lithium oxide dielectrics for applications in n- and p-type thin-film transistors, Advanced Electronic Materials, 2 (2016) 1600140. http://dx.doi.org/10.1002/aelm.201600140 (中科院二区,影响因子4.2)

23. Ao Liu, G. X. Liu*, H. H. Zhu, B. C. Shin, E. Fortunato, R. Martins, Fukai Shan* (Correspondence), Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric, Applied Physics Letters, 108 (2016)233506. http://dx.doi.org/10.1063/1.4953460 (中科院二区,影响因子3.4)

22. Ao Liu, Guoxia Liu, Huihui Zhu, Byoungchul Shin, Elvira Fortunato, Rodrigo Martins, Fukai Shan* (Correspondence), Eco-friendly, solution-processed In-W-O thin films and their applications in low-voltage, high-performance transistors, Journal of Materials Chemistry C, 4 (2016) 4478-4484. http://dx.doi.org/10.1039/C6TC00474A (中科院一区,影响因子5.25)

21. Fengyun Wang*, Hongchao Zhang, Lei Liu, Byoungchul Shin, and Fukai Shan*(Correspondence)AgV7O18: a new silver vanadate semiconductor with photodegradation ability on dyes under visible-light irradiation, Materials Letters, 169 (2016) 82-85. http://dx.doi.org/10.1016/j.matlet.2016.01.091 (中科院二区,影响因子2.6)

20. Fengyun Wang*, Hongchao Zhang, Lei Liu, Byoungchul Shin, and Fukai Shan* (Correspondence)Synthesis, surface properties and optical characteristics of CuV2O6 nanofibers, Journal of Alloys and Compounds, 672 (2016) 229-237. http://dx.doi.org/10.1016/j.jallcom.2016.02.089 (中科院二区,影响因子3.1)

19. Huihui Zhu, Ao Liu, Fukai. Shan* (Correspondence)Wenrong Yang, Wenling Zhang, Da Li, Jingquan Liu*, One-step synthesis of graphene quantum dots from defective CVD graphene and their application in IGZO UV thin film phototransistor, Carbon, 100 (2016) 201-207. http://dx.doi.org/10.1016/j.carbon.2016.01.016(中科院一区,影响因子6.1)

2015

18. Ao Liu, G.X.Liu, H.H. Zhu, B.C. Shin, E. Fortunato, R. Martins, Fukai Shan* (Correspondence), Eco-friendly water-induced aluminum oxide dielectrics and their applications in hybrid metal oxide/polymer TFT, RSC Advances, 5 (2015) 86606-86613. http://dx.doi.org/10.1039/C5RA15370K(中科院二区,影响因子3.2)

17. Ao Liu, Guoxia Liu, Huihui Zhu, Huijun Song, Byoungchul Shin, Elvira Fortunato, Rodrigo Martins, Fukai Shan* (Correspondence)Water-induced scandium oxide dielectric for low-operating voltage n- and p-type metal-oxide thin-film transistors, Advanced Functional Materials, 25 (2015) 7180-7188. http://dx.doi.org/10.1002/adfm.201502612(中科院一区,影响因子12.12)

16. Jianmin Yu, Guoxia Liu, Ao Liu, You Meng, Byoungchul Shin, Fukai Shan* (Correspondence), Solution-processed p-type copper oxide thin-film transistors fabricated by using a one-step vacuum annealing technique, Journal of Materials Chemistry C, 3 (2015) 9509-9513. http://dx.doi.org/10.1039/C5TC02384J(中科院一区,影响因子5.25)

15. Ao Liu, Guoxia Liu, Huihui Zhu, You Meng, Huijun Song, Byoungchul Shin, Elvira Fortunato, Rodrigo Martins, Fukai Shan* (Correspondence), A water-induced high-k yttrium oxide dielectric for fully-solution-processed oxide thin-film transistors, Current Applied Physics, 15 (2015) S75-S81. http://dx.doi.org/10.1016/j.cap.2015.04.015(中科院三区,影响因子2.2)

14. Guoxia Liu*, Ao Liu, Huihui Zhu, Byoungchul Shin, Elvira Fortunato, Rodrigo Martins, Yiqian Wang, Fukai Shan* (Correspondence), Low-temperature, nontoxic water-induced metal-oxide thin films and their application in thin-film transistors, Advanced Functional Materials, 25 (2015) 2564-2572. http://dx.doi.org/10.1002/adfm.201500056(中科院一区,影响因子12.12)

13. You Meng, Guoxia Liu, Ao Liu, Huijun Song, Yang Hou, Byoungchul, Fukai Shan* (Correspondence), Low-temperature fabrication of high performance indium oxide thin film transistors, RSC Advances, 5 (2015) 37807-37813. http://dx.doi.org/10.1039/C5RA04145G(中科院二区,影响因子3.2)

12. Feng Zhang, Guoxia Liu, Ao Liu, Byoungchul Shin, Fukai Shan* (Correspondence), Solution-processed hafnium oxide dielectric thin films for thin-film transistors applications, Ceramics International, 41 (2015) 13218-13223. http://dx.doi.org/10.1016/j.ceramint.2015.07.099(中科院二区,影响因子2.9)

11. Fukai Shan* (Correspondence), Ao Liu, Guo Xia Liu, You Meng, Elvira Fortunato, Rodrigo Martins, Low-voltage high-stability InZnO thin-film transistor using ultra-thin solution-processed ZrOx dielectric, Journal of Display Technology, 11 (2015) 541-546. http://dx.doi.org/10.1109/JDT.2014.2366933

10. Huiyue Tan, Guoxia Liu, Ao Liu, Byoungchul, Fukai Shan* (Correspondence)The annealing effects on the properties of solution-processed alumina thin film and its application in TFTs, Ceramics International, 41 (2015) S349-S355. http://dx.doi.org/10.1016/j.ceramint.2015.03.155(中科院二区,影响因子2.9)

9. Feng Xu, Ao Liu, Guo Xia Liu, Byoungchul Shin, and Fukai Shan* (Correspondence), Solution-processed yttrium oxide dielectric for high-performance IZO thin-film transistors, Ceramics International, 41 (2015) S337-S343. http://dx.doi.org/10.1016/j.ceramint.2015.03.120(中科院二区,影响因子2.9)

8. G.X. Liu*, A. Liu, Y. Meng, Fukai Shan* (Correspondence)B.C. Shin, W.J. Lee, C.R. Cho, Annealing dependence of solution-processed ultra-thin ZrOx films for gate dielectric applications, Journal of Nanoscience & Nanotechnology, 15 (2015) 2185-2191. http://dx.doi.org/10.1166/jnn.2015.10228

2014

7. Ao Liu, Guoxia Liu, Huihui Zhu, Feng Xu, Elvira Fortunato, Rodrigo Martins, Fukai Shan* (Correspondence), Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrOx dielectric, ACS Applied Materials & Interfaces, 6 (2014) 17364-17369. http://dx.doi.org/10.1021/am505602w(中科院一区,影响因子7.5)

6. G.X. Liu*, A. Liu, Fukai Shan* (Correspondence)Y. Meng, B.C. Shin, E. Fortunato, R. Martins, High-performance fully amorphous bilayer metal-oxide thin film transistors using ultra-thin solution-processed ZrOx dielectric, Applied Physics Letters, 105 (2014) 113509-113514. http://dx.doi.org/10.1063/1.4895782(中科院二区,影响因子3.4)

5. G.Z. Geng, G.X. Liu, Fukai Shan* (Correspondence)A. Liu, Q. Zhang, W.J. Lee, B.C. Shin, H.Z. Wu, Improved performance of InGaZnO thin-film transistors with Ta2O5/Al2O3 stack deposited by using pulsed laser deposition, Current Applied Physics, 14 (2014)S2-S6. http://dx.doi.org/10.1016/j.cap.2013.12.006

4. Ao Liu, G.X. Liu, Fukai Shan* (Correspondence)H.H. Zhu, S. Xu, J.Q. Liu, B.C. Shin, W.J. Lee, Room-temperature fabrication of ultra-thin ZrOx dielectric for high-performance InTiZnO thin-film Transistors, Current Applied Physics, 14 (2014) S39-S43. http://dx.doi.org/10.1016/j.cap.2013.11.045

3. Ao Liu, Q. Zhang, G.X. Liu, Fukai Shan* (Correspondence)J.Q. Liu, W.J. Lee, B.C. Shin, J.S. Bae, Oxygen pressure dependence of Ti-doped In-Zn-O thin film transistors, Journal of Electroceramics, 33 (2014) 31-36. http://dx.doi.org/10.1007/s10832-014-9904-6

2. Q. Zhang, G.X. Liu, Fukai Shan* (Correspondence)A. Liu, W.J. Lee, B.C. Shin, Channel layer thickness dependence of In-Ti-Zn-O thin film transistors fabricated using pulsed laser deposition, Journal of the Korean Physical Society, 64 (2014) 1514-1518. http://dx.doi.org/10.3938/jkps.64.1514 

1. G.Z. Geng, G.X. Liu, Q. Zhang, Fukai Shan* (Correspondence), W.J. Lee, B.C. Shin, C.R. Ho, Low operating voltage InGaZnO thin-film transistors based on Al2O3 high-k dielectrics fabricated using pulsed laser deposition, Journal of the Korean Physical Society, 64 (2014) 1437-1440.  http://dx.doi.org/10.3938/jkps.64.1437