作者：单福凯
关键字：晶体管
论文来源：期刊
发表时间：2020年
课题组近年(2014年以后)发表通信作者学术论文：
（更新日期： September 9, 2023）
2023
85. Zifan Wang, Yepeng Shi, Zihan Zhang, Yao Dong, Guoxia Liu*, and Fukai Shan*(Correspondence), Solution-processed oxide TFT based on bilayer channels with graded oxygen vacancy, IEEE Electron Device Letters, ** (2023) ***, DOI: 10.1109/LED.2023.3303867
84. Xiaohui Lin, Long Chen, Xi Zhong, Amal BaQais, Weiqi Dang, Mohammed A. Amin, HaoHuang, Handong Li, Gemeng Liang, Guoxia Liu*, and Zhenyu Yang*(Correspondence), N-doped bimetallic phosphides composite catalysts derived from metal-organic frameworks for electrocatalytic water splitting, Advanced Composites and Hybrid Materials, 6 (2023) 79, DOI: 10.1007/s42114-023-00660-1
83. Long Chen, Xiaohui Lin, Weiqi Dang, Hao Huang, Guoxia Liu*, and Zhenyu Yang*(Correspondence), Tantalum oxide nanosheets/polypropylene composite separator constructing lithium-ion channels for stable lithium metal batteries, Advanced Composites and Hybrid Materials, 6 (2023) 12, DOI: 10.1007/s42114-022-00589-x
82. Dandan Hao, Di Yang, Haixia Liang, Jia Huang*, and Fukai Shan*(Correspondence), Lead-free perovskites-based photonic synaptic devices with zero electric energy consumption, Science China Information Sciences, ** (2023) ***, DOI: 10.1007/s11432-023-3835-4
81. Tongzheng Li, Tongying Xu, Zhengyang Yao, Yanan Ding, Guoxia Liu*, and Fukai Shan*(Correspondence), Highly sensitive biosensor based on IGZO thin-film transistors for detection of Parkinson’s disease, Applied Physics Letters, 122 (2023) 243701, DOI: 10.1063/5.0151300
80. Qiu Haiyang, Miao Guangtan, Li Hui, Luan Qi, Guoxia Liu, and Fukai Shan*(Correspondence), Effect of Plasma Treatment on the Long-term Plasticity of Synaptic Transistor, Journal of Inorganic Materials (无机材料学报), 38 (2023) 406, DOI: 10.15541/jim20220675
79. Bowen Yan, Yanan Ding, Tongzheng Li, Haiyang Qiu, Yepeng Shi, Guoxia Liu*, and Fukai Shan*(Correspondence), Performance Enhancement of Thin-Film Transistor Based on In2O3:F/In2O3 Homojunction, IEEE Transactions on Electron Devices, 70 (2023) 3117, DOI: 10.1109/TED.2023.3268042
78. Dandan Hao, Zhenyu Yang, Jia Huang*, and Fukai Shan*(Correspondence), Recent Developments of Optoelectronic Synaptic Devices Based on Metal Halide Perovskites, Advanced Functional Materials, 33 (2023) 2211467, DOI: 10.1002/adfm.202211467
2022
77. Yanan Ding, Tongzheng Li, Bowen Yan, Guoxia Liu*, and Fukai Shan*(Correspondence), Hydroxyl-induced stability and mobility enhancement for field effect transistor based on In2O3 nanofiber, Applied Physics Letters, 121 (2022) 033301, DOI: 10.1063/5.0128457
76. Haiyang Qiu, Danna Hao, Hui Li, Yepeng Shi, Yao Dong, Guoxia Liu*, and Fukai Shan*(Correspondence), Transparent and biocompatible In2O3 artificial synapses with lactose–citric acid electrolyte for neuromorphic computing, Applied Physics Letters, 121 (2022) 183301, DOI: 10.1063/5.0124219
75. Xisai Zhang, Xinpei Duan, Wencheng Niu, Xingqiang Liu, Xuming Zou, Hao Huang, Dinusha Herath Mudiyanselage, Houqiang Fu, Bei Jiang, Guoxia Liu*, Zhenyu Yang*(Correspondence), The Mechanism of Performance Variations in MoS2 Vertical Schottky Metal–Semiconductor Photodiode Based on Thermionic Emission Theory, IEEE Transactions on Electron Devices, 69 (2022) 5644, DOI: 10.1109/TED.2022.3202149
74. Hui Li, Yanan Ding, Haiyang Qiu, Yixin Zhu, Chengzhe Han, Guoxia Liu*, Fukai Shan*(Correspondence), Flexible and Compatible Synaptic Transistor Based on Electrospun In2O3 Nanofibers, IEEE Transactions on Electron Devices, 69 (2022) 5363, DOI: 10.1109/TED.2022.3193919
73. Yanan Ding, Yajie Ren, Danna Zhang, Guoxia Liu*, and Fukai Shan*(Correspondence), Water- and DUV-induced self-passivation for In2O3 nanofiber field effect transistor, Applied Physics Letters, 121 (2022) 033301, DOI: 10.1063/5.0099875
72. Yanan Ding, Yajie Ren, Zifan Wang, Haiyang Qiu, Fukai Shan, and Guoxia Liu*(Correspondence), Humidity effect on electrical performance and bias stability of solution processed In2O3 thin film transistor, Journal of Asian Ceramic Societies, 10 (2022) 687, DOI: 10.1080/21870764.2022.2112373
71. Chengzhe Han, Junjie Wang, Ren, Guoxia Liu*, Fukai Shan*(Correspondence), Performance improvement of thin-film transistors with In2O3 channel engineering, Journal of Asian Ceramic Societies, 10 (2022) 660, DOI: 10.1080/21870764.2022.2101597
70. Yang Li, Xisai Zhang, Xinpei Duan, Wencheng Niu, Shengjie Zhao, Xiaobo He, Hao Huang, Xingqiang Liu, Xuming Zou, Lei Li,* Fukai Shan,* and Zhenyu Yang*, Electrode Engineering in MoS2 MOSFET: Different Semiconductor/Metal Interfaces, Advanced Electronic Materials, 8 (2022) 2200513, DOI: 10.1002/aelm.202200513
69. Yanan Ding, Yajie Ren, Guoxia Liu*, Fukai Shan*(Correspondence), UV-Treated ZrO2 Passivation for Transparent and High-Stability In2O3 Thin Film Transistor, IEEE Transactions on Electron Devices, 69 (2022) 3722, DOI: 10.1109/TED.2022.3175674
68. Yajie Ren, Danna Zhang, Yanan Ding, Guoxia Liu, Fukai Shan*(Correspondence), Study of oxygen plasma treatment on solution-processed SnOx thin-film transistors, Journal of Physics D: Applied Physics, 55 (2022) 325102, DOI: 10.1088/1361-6463/ac6f95
2021
67. Tang Qi, Wang Junjie, Guoxia Liu*(Correspondence), B-doped In2O3 field effect transistor prepared by electrospinning, Electronic Components and Materials, 40 (2021) 660, DOI: 10.14106/j.cnki.1001-2028.2021.0081
66. Xisai Zhang, Yang Li, Wenqian Mu, Wenqi Bai, Xiaoxue Sun, Mingyu Zhao, Zhijie Zhang, Fukai Shan*(Correspondence), and Zhenyu Yang, Advanced tape-exfoliated method for preparing large-area 2D monolayers: a review, 2D Materials, 8 (2021) 032002, DOI: 10.1088/2053-1583/ac016f
65. Junjie Wang, Yanan Ding, Zhen Wang, Qi Tang, Qian Chen, Guoxia Liu, Fukai Shan*(Correspondence), Performance Enhancement of Field-Effect Transistors Based on In2O3 Nanofiber Networks by Plasma Treatment, IEEE Electron Device Letters, 42 (2021) 176, DOI: 10.1109/LED.2020.3047123
64. Zhenyu Yang, Yang Li, Quanbing Guo, Hao Huang, Bei Jiang, Xiaobo He, Xuming Zou, Xingqiang Liu, and Fukai Shan*(Correspondence), Cladded Surface-Plasmon-Enhanced BP Photodetector Based on the Damage-Free metal–Semiconductor Interface, IEEE Transactions on Electron Devices, 68 (2021) 164, DOI: 10.1109/TED.2020.3039764
63. Chuanyu Fu, Yanan Ding, Yixin Zhu, Zhijie Xin, Guoxia Liu, Fukai Shan*(Correspondence), Field-Effect Transistors Based on Welded SnGaO Nanowire Networks, IEEE Electron Device Letters, 42 (2021) 58, DOI: 10.1109/LED.2020.3042225
62. Xiaocong Tang, Zhao Yao*, Yang Li, Weihua Zong, Guoxia Liu, Fukai Shan*(Correspondence), A high performance UWB MIMO antenna with defected ground structure and U‐shape branches, International Journal of RF and Microwave Computer-Aided Engineering, 31 (2021) e22270, DOI: 10.1002/mmce.22270
2020
61. Daiming Liu, Chengchao Jin, Fukai Shan* (Correspondence), Junjing He, and Fei Wang*, Synthesizing BaTiO3 nanostructures to explore morphological influence, kinetics, and mechanism of piezocatalytic dye degradation, ACS Applied Materials & Interfaces, 12 (2020) 17443, DOI: 10.1021/acsami.9b23351
60. Zhenyu Yang, Bei Jiang*, Zhijie Zhang, Zhongzheng Wang, Xiaobo He, Da Wan*, Xuming Zou, Xingqiang Liu, Lei Liao, and Fukai Shan* (Correspondence), The photovoltaic and photoconductive photodetector based on GeSe/2D semiconductor van der Waals heterostructure, Applied Physics Letters, 116 (2020) 141101, DOI: 10.1063/1.5143961
59. Yanan Ding, Youchao Cui, Xuhai Liu, Guoxia Liu, and Fukai Shan* (Correspondence), Welded silver nanowire networks as high-performance transparent conductive electrodes: welding techniques and device applications, Applied Materials Today, 20 (2020) 100634 , DOI: 10.1016/j.apmt.2020.100634.
58. Zhijie Xin, Yanan Ding, Yixin Zhu, Chuanyu Fu, Zhao Yao, Qian Chen, Guoxia Liu*, and Fukai Shan* (Correspondence), Solution-processed high-performance p-type perovskite NdAlO3 thin films for transparent electronics, Advanced Electronic Materials, 6 (2020) 1901110, DOI: 10.1002/aelm.201901110
57. Yanan Ding, Chao Wang, Zhijie Xin, Youchao Cui, Zhen Wang, Guoxia Liu, and Fukai Shan* (Correspondence), Low-temperature fabrication of nontoxic indium oxide nanofibers and their application in field-effect transistors, IEEE Electron Device Letters, 41 (2020) 413, DOI: 10.1109/LED.2020.2964318
56. Yixin Zhu, Guoxia Liu, Zhijie Xin, Chuanyu Fu, Qing Wan, and Fukai Shan* (Correspondence), Solution-processed, electrolyte gated In2O3 flexible synaptic transistors for brain-inspired neuromorphic applications, ACS Applied Materials & Interfaces, 12 (2020) 1061, DOI: 10.1021/acsami.9b18605
55. Yuanyue Li, Youchao Cui, Zhao Yao, Guoxia Liu, and Fukai Shan* (Correspondence), Fast electrochromic switching of electrospun Cu-doped NiO nanofibers, Scripta Materialia, 178 (2020) 472-476, DOI: 10.1016/j.scriptamat.2019.12.035.
54. Zhen Wang, Zhijie Xin, Youchao Cui, Chao Wang, Chunfeng Wang, Byoungchul Shin, Guoxia Liu, and Fukai Shan* (Correspondence), The role of oxygen in determining the electrical performance of ZnSnO nanofiber field-effect transistors, Journal of Physics D: Applied Physics, 53 (2020) 015109. DOI: 10.1088/1361-6463/ab47b2
53. Chuanyu Fu, Yanan Ding, Youchao Cui, You Meng, Zhao Yao, Guoxia Liu, and Fukai Shan* (Correspondence), Self-welding and low-temperature formation of metal oxide nanofiber networks and its application to electronic devices, IEEE Electron Device Letters, 41 (2020) 62-65, DOI: 10.1109/LED.2019.2953314
2019
52. Yanan Ding, Caixuan Fan, Chuanyu Fu, You Meng, Guoxia Liu, and Fukai Shan* (Correspondence), High-performance indium oxide thin-film transistors with aluminum oxide passivation, IEEE Electron Device Letters, 40 (2019) 1949-1952. DOI: 10.1109/LED.2019.2947762
51.Yixin Zhu, Byoungchul Shin, Guoxia Liu, and Fukai Shan (Correspondence), Electrospun ZnSnO nanofibers for neuromorphic transistors with ultralow energy consumption, IEEE Electron Device Letters, 40 (2019) 1776-1779. DOI: 10.1109/LED.2019.2942342
50. Daiming Liu, Yawei Song, Zhijie Xin, Guoxia Liu, Chengchao Jin*, and Fukai Shan* (Correspondence), High-piezocatalytic performance of eco-friendly (Bi1/2Na1/2)TiO3-based nanofibers by electrospinning, Nano Energy, 65 (2019) 104024. DOI：10.1016/j.nanoen.2019.104024. （中科院一区，影响因子 15.548）
49. Yuanyue Li, Xiaocui Wang, Guoxia Liu, Byoungchul Shin, Fukai Shan* (Correspondence), High thermoelectric efficiency of p-type BiSbTe-based composites with CuGaTe2 nanoinclusions, Scripta materialia, 172 (2019) 88-92. DOI：10.1016/j.scriptamat.2019.07.016. （中科院二区，影响因子 4.539）
48. Zhuodong Li, You Meng, Chao Wang, Youchao Cui, Zhao Yao, Byoungchul Shin,Guoxia Liu*, Fukai Shan* (Correspondence), Enhancement-mode field effect transistors based on Ti-doped In2O3 nanowires fabricated by electrospinning, Journal of Physics D: Applied Physics, 52 (2019) 225102. DOI：10.1088/1361-6463/ab0de2. （中科院二区，影响因子 2.829）
47. Chunfeng Wang, Haotian Zhu, You Meng, Shengbin Nie, Yuna Zhao, Byoung-chul Shin, Rodrigo Martins, Elvira Fortunato, Fukai Shan* (Correspondence), and Guoxia Liu*, Sol-gel processed p-type CuAlO2 semiconductor thin films and the integration in transistors, IEEE Transactions on Electron Devices, 66 (2019) 1458. DOI：10.1109/TED.2019.2893453. （中科院三区，影响因子 2.704）
2018
46. Youchao Cui, You Meng, Zhen Wang, Chunfeng Wang, Guoxia Liu*, Rodrigo Martins, Elvira Fortunato, and Fukai Shan* (Correspondence), High Performance Electronic Devices Based on Nanofibers via a Crosslinking Welding Process, Nanoscale, 10 (2018) 19427. DOI：10.1039/c8nr05420g. （中科院一区，影响因子 7.233）
45. Zhen Wang, You Meng, Youchao Cui, Caixuan Fan, Guoxia Liu*, Byoungchul Shin, Dejun Feng, and Fukai Shan* (Correspondence), Low-Voltage and High-Performance Field-Effect Transistors based on ZnxSn1-xO Nanofibers with a ZrOx Dielectric, Nanoscale, 10 (2018) 14712. DOI：10.1039/c8nr03887b. （中科院一区，影响因子 7.233）
44. Ao Liu, You Meng, Huihui Zhu, Yong-Young Noh, Guoxia Liu*, and Fukai Shan* (Correspondence), Electronspun P-Type Nickel Oxide Semiconducting Nanowires for Low-Voltage Field-Effect Transistors, ACS Applied Materials & Interfaces, 10 (2018) 25841. DOI: 10.1021/acsami.7b08794 （中科院一区，影响因子 8.097）
43. You Meng, Kaihua Lou, Rui Qi, Zidong Guo, Byoungchul Shin, Guoxia Liu*, and Fukai Shan* (Correspondence), Nature Inspired Capillary-driven Welding Process for Boosting Metal-Oxide Nanofiber Electronics, ACS Applied Materials & Interfaces, 10 (2018) 20703. DOI：10.1021/acsami.8b05104. （中科院一区，影响因子 8.097）
42. You Meng, Ao Liu, Zidong Guo, Guoxia Liu*, Byoungchul Shin, Yong-Young Noh, Elvira Fortunato, Rodrigo Martins and Fukai Shan* (Correspondence), Electronic Devices Based on Oixide Thin Films Fabricated by Fibers-to-Film Process, ACS Applied Materials & Interfaces, 10 (2018) 18057. DOI：10.1021/acsami.8b02297. （中科院一区，影响因子 8.097）
41. Chao Wang, You Meng, Zidong Guo, Byoung-Chul Shin, Guoxia Liu*, and Fukai Shan* (Correspondence), High-performance Field-Effect Transistors Based on Gadolinium Doped Indium Oxide Nanofibers and Their Application in Logic Gate, Applied Physics Letters, 112, (2018) 213501. DOI: https://doi.org/10.1063/1.5026953（中科院二区，影响因子 3.495）
40. Ao Liu, Huihui Zhu, Guoxia Liu*, Yong-Young Noh, Elvira Fortunato, Rodrigo Martins and Fukai Shan* (Correspondence), Draw Spinning of Wafer-Scale Oxide Fibers for Electronic Devices, Advanced Electronic Materials, 4 (2018) 1700644. http://doi.org/10.1002/aelm.201700644 （中科院一区，影响因子 5.466）
39. Shengbin Nie, Ao Liu, You Meng, Byoungchul Shin, Guoxia Liu*, and Fukai Shan* (Correspondence), Solution-processed ternary p-type CuCrO2 semiconductor thin films and their application in transistors, Journal of Materials Chemistry C, 6 (2018) 1393, http://doi.org/10.1039/C7TC04810F （中科院一区，影响因子 5.976）
38. Fengyun Wang, Longfei Song, Hongchao Zhang, You Meng, Linqu Luo, Yan Xi, Lei Liu, Ning Han, Zaixing Yang, Jie Tang, Fukai Shan* (Correspondence), Johnny C. Ho*, ZnO Nanofiber Thin-Film Transistors with Low-Operating Voltages, Advanced Electronic Materials, 4 (2018) 1700336 . http://doi.org/10.1002/aelm.201700336 (中科院一区，影响因子 5.466)
37. Xiaocui Wang, Yuanyue Li*, Guoxia Liu, and Fukai Shan* (Correspondence), Achieving high power factor of p-type BiSbTe thermoelectric materials via adjusting hot-pressing temperature, Intermetallics, 93 (2018) 338. https://doi.org/10.1016/j.intermet.2017.10.015.（中科院二区，影响因子 3.42）
2017
36. Huihui Zhu, Ao Liu, Guoxia Liu*, and Fukai Shan* (Correspondence), Electrospun p-type CuO nanofibers for low-voltage field-effect transistors, Applied Physics Letters, 111 (2017) 143501. http://doi.org/10.1063/1.4998787（中科院二区，影响因子 3.495）
35. Caixuan Fan, Ao Liu, You Meng, Zidong Guo, Guoxia Liu*, and Fukai Shan* (Correspondence), Solution-Processed SrOx-Gated Oxide Thin-Film Transistors and Inverters, IEEE Transactions on Electron Devices, 64 (2017) 4137-4143. http://doi.org/10.1109/TED.2017.2742060（中科院二区，影响因子 2.62）
34. Zidong Guo, Ao Liu, You Meng, Caixuan Fan, Byoungchul Shin, Guoxia Liu*, and Fukai Shan* (Correspondence), Solution-processed ytterbium oxide dielectrics for low-voltage thin-film Transistors and inverters, Ceramics International, 43 (2017) 15194-15200. http://doi.org/10.1016/j.ceramint.2017.08.052（中科院二区，影响因子 3.057）
33. Ao Liu, Huihui Zhu, Zidong Guo, You Meng, Guoxia Liu*, Elvira Fortunato, Rodrigo Martins, and Fukai Shan *(Correspondence), Solution combustion synthesis: low-temperature processing for p-type Cu:NiO thin films for transparent electronics, Advanced Materials, 29 (2017) 171599. http://doi.org/10.1002/adma.201701599（中科院一区，影响因子 21.95）
32. You Meng, Guoxia Liu*, Ao Liu, Zidong Guo, Wenjia Sun and Fukai Shan*(Correspondence), Photochemical activation of electrospun In2O3 nanofibers for high-performance electronic devices, ACS Applied Materials & Interfaces, 9 (2017) 10805-10812. http://dx.doi.org/10.1021/acsami.6b15916 （中科院一区，影响因子 8.097）
31. Ao Liu, Zidong Guo, Guoxia Liu*, Chundan Zhu, Huihui Zhu, Byoungchul Shin, Elvira Fortunato, Rodrigo Martins, Fukai Shan* (Correspondence), Redox chloride elimination reaction: facile solution route for indium-freee, low-voltage, and high-performance transistors, Advanced Electronic Materials, 3 (2017) 1600513. http://dx.doi.org/10.1002/aelm.201600513 （中科院二区，影响因子 5.466）
30. Huihui Zhu, Ao Liu, Fukai Shan* (Correspondence), Wenrong Yang, Colin Barrow and Jingquan Liu*, Direct transfer of grapheme and application in low-voltage hybrid transistors, RSC Advances, 7 (2017) 2172-2179. http://dx.doi.org/10.1039/C6RA26452B （影响因子2.936）
29. Ao Liu, Shengbin Nie, Guoxia Liu, Huihui Zhu, Chundan Zhu, Byoungchul Shin, Elvira Fortunato, Rodrigo martins and Fukai Shan* (Correspondence), In situ one-step synthesis of p-type copper oxide for low-temperature, solution-processed thin-film transistors, Journal of Materials Chemistry C, 5 (2017) 2524 http://dx.doi.org/10.1039/c7tc00574a （中科院一区，影响因子 5.976）
2016
28. Chundan Zhu, Ao Liu, Guoxia Liu*, Guixia Jiang, You Meng, Elvira Fortunato, Rodrigo Martins, Fukai Shan* (Correspondence), Low-temperature, nontoxic water-induced high-k zirconium oxide dielectrics for low-voltage, high-perfromance oxide thin-film transistors, Journal of Materials Chemistry C, 4 (2016) 10715-10721. http://dx.doi.org/10.1039/C6TC02607A（中科院一区，影响因子5.25）
27. Guixia Jiang, Ao Liu, Guoxia Liu*, Chundan Zhu, You Meng, Byoungchul Shin, Elvira fortunate, Rodrigo Martins, and Fukai Shan* (Correspondence), Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors. Applied Physics Letters, 109 (2016) 183508. http://dx.doi.org/10.1063/1.4966897 （中科院二区，影响因子3.4）
26. Fukai Shan#* (Correspondence), Ao Liu#, Huihui Zhu, Weijin Kong, Jingquan Liu, Byoungchul Shin, Elvira Fortunato, Rodrigo Martins, and Guoxia Liu*, High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric, Journal of Materials Chemistry C, 4 (2016) 9438-9444. http://dx.doi.org/10.1039/C6TC02137A（中科院一区，影响因子5.25）
25. Yuanyue Li, Guoxia Liu, Xiaoying Qin*, and Fukai Shan*(Correspondence), Inhibition of minority transport for elevating the thermoelectric figure of merit of CuO/BiSbTe nanocomposites at high temperatures, RSC Advances, 6 (2016) 112050-112056. http://dx.doi.org/10.1039/C6RA24107G （影响因子3.2）
24. Ao Liu, Guoxia Liu*, Chundan Zhu, Huihui Zhu, Elvira fortunate, Rodrigo Martins, and Fukai Shan* (Correspondence), Solution-processed alkaline lithium oxide dielectrics for applications in n- and p-type thin-film transistors, Advanced Electronic Materials, 2 (2016) 1600140. http://dx.doi.org/10.1002/aelm.201600140 （中科院二区，影响因子4.2）
23. Ao Liu, G. X. Liu*, H. H. Zhu, B. C. Shin, E. Fortunato, R. Martins, Fukai Shan* (Correspondence), Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric, Applied Physics Letters, 108 (2016)233506. http://dx.doi.org/10.1063/1.4953460 （中科院二区，影响因子3.4）
22. Ao Liu, Guoxia Liu, Huihui Zhu, Byoungchul Shin, Elvira Fortunato, Rodrigo Martins, Fukai Shan* (Correspondence), Eco-friendly, solution-processed In-W-O thin films and their applications in low-voltage, high-performance transistors, Journal of Materials Chemistry C, 4 (2016) 4478-4484. http://dx.doi.org/10.1039/C6TC00474A （中科院一区，影响因子5.25）
21. Fengyun Wang*, Hongchao Zhang, Lei Liu, Byoungchul Shin, and Fukai Shan*(Correspondence), AgV7O18: a new silver vanadate semiconductor with photodegradation ability on dyes under visible-light irradiation, Materials Letters, 169 (2016) 82-85. http://dx.doi.org/10.1016/j.matlet.2016.01.091 （中科院二区，影响因子2.6）
20. Fengyun Wang*, Hongchao Zhang, Lei Liu, Byoungchul Shin, and Fukai Shan* (Correspondence), Synthesis, surface properties and optical characteristics of CuV2O6 nanofibers, Journal of Alloys and Compounds, 672 (2016) 229-237. http://dx.doi.org/10.1016/j.jallcom.2016.02.089 （中科院二区，影响因子3.1）
19. Huihui Zhu, Ao Liu, Fukai. Shan* (Correspondence), Wenrong Yang, Wenling Zhang, Da Li, Jingquan Liu*, One-step synthesis of graphene quantum dots from defective CVD graphene and their application in IGZO UV thin film phototransistor, Carbon, 100 (2016) 201-207. http://dx.doi.org/10.1016/j.carbon.2016.01.016（中科院一区，影响因子6.1）
2015
18. Ao Liu, G.X.Liu, H.H. Zhu, B.C. Shin, E. Fortunato, R. Martins, Fukai Shan* (Correspondence), Eco-friendly water-induced aluminum oxide dielectrics and their applications in hybrid metal oxide/polymer TFT, RSC Advances, 5 (2015) 86606-86613. http://dx.doi.org/10.1039/C5RA15370K（中科院二区，影响因子3.2）
17. Ao Liu, Guoxia Liu, Huihui Zhu, Huijun Song, Byoungchul Shin, Elvira Fortunato, Rodrigo Martins, Fukai Shan* (Correspondence), Water-induced scandium oxide dielectric for low-operating voltage n- and p-type metal-oxide thin-film transistors, Advanced Functional Materials, 25 (2015) 7180-7188. http://dx.doi.org/10.1002/adfm.201502612（中科院一区，影响因子12.12）
16. Jianmin Yu, Guoxia Liu, Ao Liu, You Meng, Byoungchul Shin, Fukai Shan* (Correspondence), Solution-processed p-type copper oxide thin-film transistors fabricated by using a one-step vacuum annealing technique, Journal of Materials Chemistry C, 3 (2015) 9509-9513. http://dx.doi.org/10.1039/C5TC02384J（中科院一区，影响因子5.25）
15. Ao Liu, Guoxia Liu, Huihui Zhu, You Meng, Huijun Song, Byoungchul Shin, Elvira Fortunato, Rodrigo Martins, Fukai Shan* (Correspondence), A water-induced high-k yttrium oxide dielectric for fully-solution-processed oxide thin-film transistors, Current Applied Physics, 15 (2015) S75-S81. http://dx.doi.org/10.1016/j.cap.2015.04.015（中科院三区，影响因子2.2）
14. Guoxia Liu*, Ao Liu, Huihui Zhu, Byoungchul Shin, Elvira Fortunato, Rodrigo Martins, Yiqian Wang, Fukai Shan* (Correspondence), Low-temperature, nontoxic water-induced metal-oxide thin films and their application in thin-film transistors, Advanced Functional Materials, 25 (2015) 2564-2572. http://dx.doi.org/10.1002/adfm.201500056（中科院一区，影响因子12.12）
13. You Meng, Guoxia Liu, Ao Liu, Huijun Song, Yang Hou, Byoungchul, Fukai Shan* (Correspondence), Low-temperature fabrication of high performance indium oxide thin film transistors, RSC Advances, 5 (2015) 37807-37813. http://dx.doi.org/10.1039/C5RA04145G（中科院二区，影响因子3.2）
12. Feng Zhang, Guoxia Liu, Ao Liu, Byoungchul Shin, Fukai Shan* (Correspondence), Solution-processed hafnium oxide dielectric thin films for thin-film transistors applications, Ceramics International, 41 (2015) 13218-13223. http://dx.doi.org/10.1016/j.ceramint.2015.07.099（中科院二区，影响因子2.9）
11. Fukai Shan* (Correspondence), Ao Liu, Guo Xia Liu, You Meng, Elvira Fortunato, Rodrigo Martins, Low-voltage high-stability InZnO thin-film transistor using ultra-thin solution-processed ZrOx dielectric, Journal of Display Technology, 11 (2015) 541-546. http://dx.doi.org/10.1109/JDT.2014.2366933
10. Huiyue Tan, Guoxia Liu, Ao Liu, Byoungchul, Fukai Shan* (Correspondence), The annealing effects on the properties of solution-processed alumina thin film and its application in TFTs, Ceramics International, 41 (2015) S349-S355. http://dx.doi.org/10.1016/j.ceramint.2015.03.155（中科院二区，影响因子2.9）
9. Feng Xu, Ao Liu, Guo Xia Liu, Byoungchul Shin, and Fukai Shan* (Correspondence), Solution-processed yttrium oxide dielectric for high-performance IZO thin-film transistors, Ceramics International, 41 (2015) S337-S343. http://dx.doi.org/10.1016/j.ceramint.2015.03.120（中科院二区，影响因子2.9）
8. G.X. Liu*, A. Liu, Y. Meng, Fukai Shan* (Correspondence), B.C. Shin, W.J. Lee, C.R. Cho, Annealing dependence of solution-processed ultra-thin ZrOx films for gate dielectric applications, Journal of Nanoscience & Nanotechnology, 15 (2015) 2185-2191. http://dx.doi.org/10.1166/jnn.2015.10228
2014
7. Ao Liu, Guoxia Liu, Huihui Zhu, Feng Xu, Elvira Fortunato, Rodrigo Martins, Fukai Shan* (Correspondence), Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrOx dielectric, ACS Applied Materials & Interfaces, 6 (2014) 17364-17369. http://dx.doi.org/10.1021/am505602w（中科院一区，影响因子7.5）
6. G.X. Liu*, A. Liu, Fukai Shan* (Correspondence), Y. Meng, B.C. Shin, E. Fortunato, R. Martins, High-performance fully amorphous bilayer metal-oxide thin film transistors using ultra-thin solution-processed ZrOx dielectric, Applied Physics Letters, 105 (2014) 113509-113514. http://dx.doi.org/10.1063/1.4895782（中科院二区，影响因子3.4）
5. G.Z. Geng, G.X. Liu, Fukai Shan* (Correspondence), A. Liu, Q. Zhang, W.J. Lee, B.C. Shin, H.Z. Wu, Improved performance of InGaZnO thin-film transistors with Ta2O5/Al2O3 stack deposited by using pulsed laser deposition, Current Applied Physics, 14 (2014)S2-S6. http://dx.doi.org/10.1016/j.cap.2013.12.006
4. Ao Liu, G.X. Liu, Fukai Shan* (Correspondence), H.H. Zhu, S. Xu, J.Q. Liu, B.C. Shin, W.J. Lee, Room-temperature fabrication of ultra-thin ZrOx dielectric for high-performance InTiZnO thin-film Transistors, Current Applied Physics, 14 (2014) S39-S43. http://dx.doi.org/10.1016/j.cap.2013.11.045
3. Ao Liu, Q. Zhang, G.X. Liu, Fukai Shan* (Correspondence), J.Q. Liu, W.J. Lee, B.C. Shin, J.S. Bae, Oxygen pressure dependence of Ti-doped In-Zn-O thin film transistors, Journal of Electroceramics, 33 (2014) 31-36. http://dx.doi.org/10.1007/s10832-014-9904-6
2. Q. Zhang, G.X. Liu, Fukai Shan* (Correspondence), A. Liu, W.J. Lee, B.C. Shin, Channel layer thickness dependence of In-Ti-Zn-O thin film transistors fabricated using pulsed laser deposition, Journal of the Korean Physical Society, 64 (2014) 1514-1518. http://dx.doi.org/10.3938/jkps.64.1514
1. G.Z. Geng, G.X. Liu, Q. Zhang, Fukai Shan* (Correspondence), W.J. Lee, B.C. Shin, C.R. Ho, Low operating voltage InGaZnO thin-film transistors based on Al2O3 high-k dielectrics fabricated using pulsed laser deposition, Journal of the Korean Physical Society, 64 (2014) 1437-1440. http://dx.doi.org/10.3938/jkps.64.1437