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Journal Paper List (2014-2018)
作者:单福凯
关键字:晶体管
论文来源:期刊
发表时间:2018年
  近年发表通信作者学术论文如下:
(更新日期:May 21, 2018)

2018

44. You Meng, Kaihua Lou, Rui Qi, Zidong Guo, Byoungchul Shin, Guoxia Liu*, and Fukai Shan* (Correspondence), Nature Inspired Capillary-driven Welding Process for Boosting Metal-Oxide Nanofiber Electronics, ACS Applied Materials & Interfaces, Accepted, May 25, 2018. DOI:10.1021/acsami.8b05104. (中科院一区,影响因子7.5)


43. You Meng, Ao Liu, Zidong Guo, Guoxia Liu*, Byoungchul Shin, Yong-Young Noh, Elvira Fortunato, Rodrigo Martins and Fukai Shan* (Correspondence), Electronic Devices Based on Oixide Thin Films Fabricated by Fibers-to-Film Process, ACS Applied Materials & Interfaces, Accepted, May 7, 2018. DOI:10.1021/acsami.8b02297. (中科院一区,影响因子7.5)


42. Chao Wang, You Meng, Zidong Guo, Byoung-Chul Shin, Guoxia Liu*, and Fukai Shan* (Correspondence), High-performance Field-Effect Transistors Based on Gadolinium Doped Indium Oxide Nanofibers and Their Application in Logic Gate, Applied Physics Letters, 112, (2018) 213501. DOI: https://doi.org/10.1063/1.5026953(中科院二区,影响因子3.4)


41. Ao Liu, Huihui Zhu, Guoxia Liu*, Yong-Young Noh, Elvira Fortunato, Rodrigo Martins and Fukai Shan* (Correspondence), Draw Spinning of Wafer-Scale Oxide Fibers for Electronic Devices, Advanced Electronic Materials, Accepted, March 14, 2018. http://doi.org/10.1002/aelm.201700644 (中科院二区,影响因子4.19)


40. Shengbin Nie, Ao Liu, You Meng, Byoungchul Shin, Guoxia Liu*, and Fukai Shan* (Correspondence), Solution-processed ternary p-type CuCrO2 semiconductor thin films and their application in transistors, Journal of Materials Chemistry C, 6 (2018) 1393, http://doi.org/10.1039/C7TC04810F (中科院一区,影响因子5.25)


39. Fengyun Wang, Longfei Song, Hongchao Zhang, You Meng, Linqu Luo, Yan Xi, Lei Liu, Ning Han, Zaixing Yang, Jie Tang, Fukai Shan* (Correspondence), Johnny C. Ho*, ZnO Nanofiber Thin-Film Transistors with Low-Operating Voltages, Advanced Electronic Materials, 4 (2018) 1700336 . http://doi.org/10.1002/aelm.201700336 (中科院二区,影响因子4.19)


38. Xiaocui Wang, Yuanyue Li*, Guoxia Liu, and Fukai Shan* (Correspondence), Achieving high power factor of p-type BiSbTe thermoelectric materials via adjusting hot-pressing temperature, Intermetallics, 93 (2018) 338. https://doi.org/10.1016/j.intermet.2017.10.015.(中科院二区,影响因子3.1)


37. Ao Liu, You Meng, Huihui Zhu, Yong-Young Noh, Guoxia Liu*, and Fukai Shan* (Correspondence), Electronspun P-Type Nickel Oxide Semiconducting Nanowires for Low-Voltage Field-Effect Transistors, ACS Applied Materials & Interfaces, Accepted, Sept. 22, 2017. http://doi.org/10.1021/acsami.7b08794 (中科院一区,影响因子7.5)

2017

36. Huihui Zhu, Ao Liu, Guoxia Liu*, and Fukai Shan* (Correspondence), Electrospun p-type CuO nanofibers for low-voltage field-effect transistors, Applied Physics Letters, 111 (2017) 143501. http://doi.org/10.1063/1.4998787(中科院二区,影响因子3.4)


35. Caixuan Fan, Ao Liu, You Meng, Zidong Guo, Guoxia Liu*, and Fukai Shan* (Correspondence)Solution-Processed SrOx-Gated Oxide Thin-Film Transistors and InvertersIEEE Transactions on Electron Devices, 64 (2017) 4137-4143. http://doi.org/10.1109/TED.2017.2742060(中科院二区,影响因子 2.6)


34. Zidong Guo, Ao Liu, You Meng, Caixuan Fan, Byoungchul Shin, Guoxia Liu*, and Fukai Shan* (Correspondence), Solution-processed ytterbium oxide dielectrics for low-voltage thin-film Transistors and inverters, Ceramics International, 43 (2017) 15194-15200. http://doi.org/10.1016/j.ceramint.2017.08.052(中科院二区,影响因子2.9)


33. Ao Liu, Huihui Zhu, Zidong Guo, You Meng, Guoxia Liu*, Elvira Fortunato, Rodrigo Martins, and Fukai Shan *(Correspondence), Solution combustion synthesis: low-temperature processing for p-type Cu:NiO thin films for transparent electronics, Advanced Materials, 29 (2017) 171599. http://doi.org/10.1002/adma.201701599(中科院一区,影响因子19.79)


32. You Meng, Guoxia Liu*, Ao Liu, Zidong Guo, Wenjia Sun and Fukai Shan*(Correspondence)Photochemical activation of electrospun In2O3 nanofibers for high-performance electronic devices, ACS Applied Materials & Interfaces, 9 (2017) 10805-10812.  http://dx.doi.org/10.1021/acsami.6b15916 (中科院一区,影响因子7.5)


31. Ao Liu, Zidong Guo, Guoxia Liu*, Chundan Zhu, Huihui Zhu, Byoungchul Shin, Elvira Fortunato, Rodrigo Martins, Fukai Shan(Correspondence), Redox chloride elimination reaction: facile solution route for indium-freee, low-voltage, and high-performance transistors, Advanced Electronic Materials, 3 (2017) 1600513. http://dx.doi.org/10.1002/aelm.201600513 (中科院二区,影响因子4.2)


30. Huihui Zhu, Ao Liu, Fukai Shan(Correspondence), Wenrong Yang, Colin Barrow and Jingquan Liu*, Direct transfer of grapheme and application in low-voltage hybrid transistors, RSC Advances, 7 (2017) 2172-2179. http://dx.doi.org/10.1039/C6RA26452B (影响因子3.2)


29. Ao Liu, Shengbin Nie, Guoxia Liu, Huihui Zhu, Chundan Zhu, Byoungchul Shin, Elvira Fortunato, Rodrigo martins and Fukai Shan* (Correspondence), In situ one-step synthesis of p-type copper oxide for low-temperature, solution-processed thin-film transistors, Journal of Materials Chemistry C, 5 (2017) 2524 http://dx.doi.org/10.1039/c7tc00574a (中科院一区,影响因子5.25)

2016

28. Chundan Zhu, Ao Liu, Guoxia Liu*, Guixia Jiang, You Meng, Elvira Fortunato, Rodrigo Martins, Fukai Shan* (Correspondence), Low-temperature, nontoxic water-induced high-k zirconium oxide dielectrics for low-voltage, high-perfromance oxide thin-film transistors, Journal of Materials Chemistry C, 4 (2016) 10715-10721. http://dx.doi.org/10.1039/C6TC02607A(中科院一区,影响因子5.25)


27. Guixia Jiang, Ao Liu, Guoxia Liu*, Chundan Zhu, You Meng, Byoungchul Shin, Elvira fortunate, Rodrigo Martins, and Fukai Shan(Correspondence), Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors. Applied Physics Letters, 109 (2016) 183508. http://dx.doi.org/10.1063/1.4966897 (中科院二区,影响因子3.4)


26. Fukai Shan#* (Correspondence), Ao Liu#, Huihui Zhu, Weijin Kong, Jingquan Liu, Byoungchul Shin, Elvira Fortunato, Rodrigo Martins, and Guoxia Liu*, High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric, Journal of Materials Chemistry C, 4 (2016) 9438-9444. http://dx.doi.org/10.1039/C6TC02137A(中科院一区,影响因子5.25) 


25. Yuanyue Li, Guoxia Liu, Xiaoying Qin*, and Fukai Shan*(Correspondence), Inhibition of minority transport for elevating the thermoelectric figure of merit of CuO/BiSbTe nanocomposites at high temperatures, RSC Advances, 6 (2016) 112050-112056. http://dx.doi.org/10.1039/C6RA24107G (影响因子3.2)


24. Ao Liu, Guoxia Liu*, Chundan Zhu, Huihui Zhu, Elvira fortunate, Rodrigo Martins, and Fukai Shan* (Correspondence)Solution-processed alkaline lithium oxide dielectrics for applications in n- and p-type thin-film transistors, Advanced Electronic Materials, 2 (2016) 1600140. http://dx.doi.org/10.1002/aelm.201600140 (中科院二区,影响因子4.2)


23. Ao Liu, G. X. Liu*, H. H. Zhu, B. C. Shin, E. Fortunato, R. Martins, Fukai Shan* (Correspondence), Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric, Applied Physics Letters, 108 (2016)233506. http://dx.doi.org/10.1063/1.4953460 (中科院二区,影响因子3.4)


22. Ao Liu, Guoxia Liu, Huihui Zhu, Byoungchul Shin, Elvira Fortunato, Rodrigo Martins, Fukai Shan* (Correspondence), Eco-friendly, solution-processed In-W-O thin films and their applications in low-voltage, high-performance transistors, Journal of Materials Chemistry C, 4 (2016) 4478-4484. http://dx.doi.org/10.1039/C6TC00474A (中科院一区,影响因子5.25)


21. Fengyun Wang*, Hongchao Zhang, Lei Liu, Byoungchul Shin, and Fukai Shan*(Correspondence)AgV7O18: a new silver vanadate semiconductor with photodegradation ability on dyes under visible-light irradiation, Materials Letters, 169 (2016) 82-85. http://dx.doi.org/10.1016/j.matlet.2016.01.091 (中科院二区,影响因子2.6)


20. Fengyun Wang*, Hongchao Zhang, Lei Liu, Byoungchul Shin, and Fukai Shan* (Correspondence)Synthesis, surface properties and optical characteristics of CuV2O6 nanofibers, Journal of Alloys and Compounds, 672 (2016) 229-237. http://dx.doi.org/10.1016/j.jallcom.2016.02.089 (中科院二区,影响因子3.1)


19. Huihui Zhu, Ao Liu, Fukai. Shan* (Correspondence)Wenrong Yang, Wenling Zhang, Da Li, Jingquan Liu*, One-step synthesis of graphene quantum dots from defective CVD graphene and their application in IGZO UV thin film phototransistor, Carbon, 100 (2016) 201-207. http://dx.doi.org/10.1016/j.carbon.2016.01.016(中科院一区,影响因子6.1)

2015

18. Ao Liu, G.X.Liu, H.H. Zhu, B.C. Shin, E. Fortunato, R. Martins, Fukai Shan* (Correspondence), Eco-friendly water-induced aluminum oxide dielectrics and their applications in hybrid metal oxide/polymer TFT, RSC Advances, 5 (2015) 86606-86613. http://dx.doi.org/10.1039/C5RA15370K(中科院二区,影响因子3.2)


17. Ao Liu, Guoxia Liu, Huihui Zhu, Huijun Song, Byoungchul Shin, Elvira Fortunato, Rodrigo Martins, Fukai Shan* (Correspondence)Water-induced scandium oxide dielectric for low-operating voltage n- and p-type metal-oxide thin-film transistors, Advanced Functional Materials, 25 (2015) 7180-7188. http://dx.doi.org/10.1002/adfm.201502612(中科院一区,影响因子12.12)


16. Jianmin Yu, Guoxia Liu, Ao Liu, You Meng, Byoungchul Shin, Fukai Shan* (Correspondence), Solution-processed p-type copper oxide thin-film transistors fabricated by using a one-step vacuum annealing technique, Journal of Materials Chemistry C, 3 (2015) 9509-9513. http://dx.doi.org/10.1039/C5TC02384J(中科院一区,影响因子5.25)


15. Ao Liu, Guoxia Liu, Huihui Zhu, You Meng, Huijun Song, Byoungchul Shin, Elvira Fortunato, Rodrigo Martins, Fukai Shan* (Correspondence), A water-induced high-k yttrium oxide dielectric for fully-solution-processed oxide thin-film transistors, Current Applied Physics, 15 (2015) S75-S81. http://dx.doi.org/10.1016/j.cap.2015.04.015(中科院三区,影响因子2.2)


14. Guoxia Liu*, Ao Liu, Huihui Zhu, Byoungchul Shin, Elvira Fortunato, Rodrigo Martins, Yiqian Wang, Fukai Shan* (Correspondence), Low-temperature, nontoxic water-induced metal-oxide thin films and their application in thin-film transistors, Advanced Functional Materials, 25 (2015) 2564-2572. http://dx.doi.org/10.1002/adfm.201500056(中科院一区,影响因子12.12)


13. You Meng, Guoxia Liu, Ao Liu, Huijun Song, Yang Hou, Byoungchul, Fukai Shan* (Correspondence), Low-temperature fabrication of high performance indium oxide thin film transistors, RSC Advances, 5 (2015) 37807-37813. http://dx.doi.org/10.1039/C5RA04145G(中科院二区,影响因子3.2)


12. Feng Zhang, Guoxia Liu, Ao Liu, Byoungchul Shin, Fukai Shan* (Correspondence), Solution-processed hafnium oxide dielectric thin films for thin-film transistors applications, Ceramics International, 41 (2015) 13218-13223. http://dx.doi.org/10.1016/j.ceramint.2015.07.099(中科院二区,影响因子2.9)


11. Fukai Shan* (Correspondence), Ao Liu, Guo Xia Liu, You Meng, Elvira Fortunato, Rodrigo Martins, Low-voltage high-stability InZnO thin-film transistor using ultra-thin solution-processed ZrOx dielectric, Journal of Display Technology, 11 (2015) 541-546. http://dx.doi.org/10.1109/JDT.2014.2366933


10. Huiyue Tan, Guoxia Liu, Ao Liu, Byoungchul, Fukai Shan* (Correspondence)The annealing effects on the properties of solution-processed alumina thin film and its application in TFTs, Ceramics International, 41 (2015) S349-S355. http://dx.doi.org/10.1016/j.ceramint.2015.03.155(中科院二区,影响因子2.9)


9. Feng Xu, Ao Liu, Guo Xia Liu, Byoungchul Shin, and Fukai Shan* (Correspondence), Solution-processed yttrium oxide dielectric for high-performance IZO thin-film transistors, Ceramics International, 41 (2015) S337-S343. http://dx.doi.org/10.1016/j.ceramint.2015.03.120(中科院二区,影响因子2.9)


8. G.X. Liu*, A. Liu, Y. Meng, Fukai Shan* (Correspondence)B.C. Shin, W.J. Lee, C.R. Cho, Annealing dependence of solution-processed ultra-thin ZrOx films for gate dielectric applications, Journal of Nanoscience & Nanotechnology, 15 (2015) 2185-2191. http://dx.doi.org/10.1166/jnn.2015.10228

2014

7. Ao Liu, Guoxia Liu, Huihui Zhu, Feng Xu, Elvira Fortunato, Rodrigo Martins, Fukai Shan* (Correspondence), Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrOx dielectric, ACS Applied Materials & Interfaces, 6 (2014) 17364-17369. http://dx.doi.org/10.1021/am505602w(中科院一区,影响因子7.5)


6. G.X. Liu*, A. Liu, Fukai Shan* (Correspondence)Y. Meng, B.C. Shin, E. Fortunato, R. Martins, High-performance fully amorphous bilayer metal-oxide thin film transistors using ultra-thin solution-processed ZrOx dielectric, Applied Physics Letters, 105 (2014) 113509-113514. http://dx.doi.org/10.1063/1.4895782(中科院二区,影响因子3.4)


5. G.Z. Geng, G.X. Liu, Fukai Shan* (Correspondence)A. Liu, Q. Zhang, W.J. Lee, B.C. Shin, H.Z. Wu, Improved performance of InGaZnO thin-film transistors with Ta2O5/Al2O3 stack deposited by using pulsed laser deposition, Current Applied Physics, 14 (2014)S2-S6. http://dx.doi.org/10.1016/j.cap.2013.12.006


4. Ao Liu, G.X. Liu, Fukai Shan* (Correspondence)H.H. Zhu, S. Xu, J.Q. Liu, B.C. Shin, W.J. Lee, Room-temperature fabrication of ultra-thin ZrOx dielectric for high-performance InTiZnO thin-film Transistors, Current Applied Physics, 14 (2014) S39-S43. http://dx.doi.org/10.1016/j.cap.2013.11.045


3. Ao Liu, Q. Zhang, G.X. Liu, Fukai Shan* (Correspondence)J.Q. Liu, W.J. Lee, B.C. Shin, J.S. Bae, Oxygen pressure dependence of Ti-doped In-Zn-O thin film transistors, Journal of Electroceramics, 33 (2014) 31-36. http://dx.doi.org/10.1007/s10832-014-9904-6


2. Q. Zhang, G.X. Liu, Fukai Shan* (Correspondence)A. Liu, W.J. Lee, B.C. Shin, Channel layer thickness dependence of In-Ti-Zn-O thin film transistors fabricated using pulsed laser deposition, Journal of the Korean Physical Society, 64 (2014) 1514-1518. http://dx.doi.org/10.3938/jkps.64.1514 


1. G.Z. Geng, G.X. Liu, Q. Zhang, Fukai Shan* (Correspondence), W.J. Lee, B.C. Shin, C.R. Ho, Low operating voltage InGaZnO thin-film transistors based on Al2O3 high-k dielectrics fabricated using pulsed laser deposition, Journal of the Korean Physical Society, 64 (2014) 1437-1440.  http://dx.doi.org/10.3938/jkps.64.1437