简介: |
Inthiswork,SOImaterialishardenedbySiionimplantationandhightemperatureanneal.NMOSFETsandCMOSinverterswerefabricatedonimprovedSOIsubstrateandstandardSOIsubstrate,respectively.Experimentshowedthatafterexposuretothesameradiationenvironment,circuitsonimprovedSOIsubstrateweremuchlessdeteriorated.AnalysisontrappedchargeandinterfacechargeinburiedoxideisputforwardtoexplainthestrongerradiationtoleranceoftheimprovedSOIsubstrate.Throughexperimentalandanalyticalresults,thistechniqueforradiationprotectionprovesvalid. |
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